SM6A27 www.vishay.com vishay general semiconductor revision: 14-sep-11 1 document number: 88383 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount par ? transient voltage suppressors high temperature stability an d high reliability conditions features ? junction passivation opti mized design passivated anisotropic rectifier technology ?t j = 175 c capability suitable for high reliability and automotive requirement ? low leakage current ? low forward voltage drop ? high surge capability ? meets iso7637-2 surge specification ? meets msl level 1, per j-st d-020, lf maximum peak of 245 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. mechanical data case: do-218ab molding compound meets ul 94 v-0 flammability rating base p/nhe3 - rohs compliant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 he3 suffix meets jesd 201 class 2 whisker test polarity: heatsink is anode primary characteristics v br 27 v p ppm (10 x 1000 s) 4600 w p d 6 w i rsm 90 a i fsm 600 a t j max. 175 c do-218ab maximum ratings (t c = 25 c unless otherwise noted) parameter symbol value unit peak pulse power di ssipation with 10/ 1000 s waveform p ppm 4600 w power dissipation on infinite heatsink at t c = 25 c (fig. 1) p d 6.0 w non-repetitive peak reverse surge cu rrent for 10 s/10 ms exponentially decaying waveform i rsm 90 a maximum working stand-off voltage v wm 22.0 v peak forward surge current 8. 3 ms single ha lf sine-wave i fsm 600 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
SM6A27 www.vishay.com vishay general semiconductor revision: 14-sep-11 2 document number: 88383 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) measured on a 300 s square pulse width note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - power derating curve fig. 2 - load dump power characteristics (10 ms exponent ial waveform) electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol min. typ. max. unit reverse zener voltage i z = 10 ma v z 24.0 - 30.0 v zener voltage temperature coefficient i z = 10 ma v ztc --36mv/c clamping voltage for 10 s/10 ms exponentially d ecaying waveform i pp = 65 a v c - - 40.0 v instantaneous forward voltage i f = 6.0 a v f (1) --0.99 v i f = 100 a - 0.94 - reverse leakage current rated v wm t j = 25 c i r --0.5 a t j = 175 c - - 20.0 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to case r ? jc 0.95 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode SM6A27he3/2d (1) 2.550 2d 750 13" diameter plastic tape and reel, anode towards the sprocket hole 0 2.0 4.0 6.0 8.0 0 50 100 150 200 power di ss ipation (w) ca s e temperature (c) 0 2000 1000 3000 4000 5000 6000 25 50 75 100 125 150 175 load dump power (w) ca s e temperature (c)
SM6A27 www.vishay.com vishay general semiconductor revision: 14-sep-11 3 document number: 88383 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - pulse waveform fig. 4 - reverse power capability fig. 5 - typical instantaneous forward characteristics fig. 6 - typical reverse characteristics fig. 7 - typical tran sient thermal impedance 0 50 100 150 0 10 20 30 40 input peak pul s e current (%) t - time (m s ) t d t r = 10 s peak value i ppm half value - i ppm i pp 2 t j = 25 c pul s e width (t d ) i s defined a s the point where the peak current decay s to 50 % of i ppm rever s e s urge power (w) 1000 10 000 10 100 pul s e width (m s ) - ? i pp exponential waveform 100 10 1.0 0.1 0.01 0.35 0.45 0.55 0.65 0.75 0.85 0.95 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) t j = 150 c t j = 25 c 100 10 1.0 0.1 0.01 0.001 0.0001 percentage of v br (%) in s tantaneou s rever s e current (a) 5203550658095 t j = 25 c t j = 175 c 100 10 1 0.1 0.01 0.01 0.1 1 10 100 t - pul s e width ( s ) tran s ient thermal impedance (c/w) r jc r ja
SM6A27 www.vishay.com vishay general semiconductor revision: 14-sep-11 4 document number: 88383 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) do-218ab mountin g pad layout 0.413 (10.5) 0.374 (9.5) 0.091 (2.3) 0.067 (1.7) 0.116 (3.0) 0.093 (2.4) 0.150 (3.8) 0.126 (3.2) 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) 0.116 (3.0) 0.093 (2.4) 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.342 (8.7) 0.327 (8.3) 0.413 (10.5) 0.374 (9.5) 0.028 (0.7) 0.020 (0.5) 0.138 (3.5) 0.098 (2.5) lead 1 0.098 (2.5) 0.059 (1.5) lead 2/metal heat s ink 0.197 (5.0) 0.185 (4.7) 0.016 (0.4) min.
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